 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BSS 131 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type BSS 131 Type BSS 131 BSS 131 Pin 2 S Marking SRs Pin 3 D VDS 240 V ID 0.1 A RDS(on) 16 Package SOT-23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS VDGR VGS Vgs ID RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current 14 20 A 0.1 TA = 26 C DC drain current, pulsed IDpuls 0.4 TA = 25 C Power dissipation Ptot 0.36 W TA = 25 C Semiconductor Group 1 Sep-13-1996 BSS 131 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 350 285 E 55 / 150 / 56 Unit C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.4 0.1 2 1 12 15 2 1 60 30 10 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA nA 16 26 VDS = 240 V, VGS = 0 V, Tj = 25 C VDS = 240 V, VGS = 0 V, Tj = 125 C VDS = 130 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.1 A VGS = 4.5 V, ID = 0.1 A Semiconductor Group 2 Sep-13-1996 BSS 131 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.14 60 8 3.5 - S pF 80 12 5 ns 5 8 VDS 2 * ID * RDS(on)max, ID = 0.1 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Rise time tr 8 12 VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Turn-off delay time td(off) 12 16 VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Fall time tf 15 20 VDD = 30 V, VGS = 10 V, ID = 0.26 A RGS = 50 Semiconductor Group 3 Sep-13-1996 BSS 131 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 0.8 0.1 0.4 V 1.2 Values typ. max. Unit TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.2 A, Tj = 25 C Semiconductor Group 4 Sep-13-1996 BSS 131 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.11 A 0.40 W Ptot 0.32 0.28 0.24 ID 0.09 0.08 0.07 0.06 0.20 0.05 0.16 0.04 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 C 160 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 285 V 275 V(BR)DSS 270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 Sep-13-1996 BSS 131 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.24 A 0.20 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 50 Ptot = 0W l k jihf e g d VGS [V] a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 b c RDS (on) 40 35 30 25 20 15 a b ID 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 a c d e f g h i j c ed f h bk l j ki g 10 5 0 V 10 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18 VGS [V] = a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 0.32 0.24 S A 0.20 ID 0.24 gfs 0.18 0.16 0.20 0.14 0.16 0.12 0.10 0.12 0.08 0.08 0.06 0.04 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A ID 0.30 VGS Semiconductor Group 6 Sep-13-1996 BSS 131 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.1 A, VGS = 10 V 40 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 32 28 24 20 16 12 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 typ 1.6 1.2 typ 8 4 0 -60 -20 20 60 100 C 160 2% 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 0 pF C 10 2 A IF 10 -1 Ciss 10 1 10 -2 Coss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-13-1996 BSS 131 Package outlines SOT-23 Dimensions in mm Semiconductor Group 8 Sep-13-1996 |
Price & Availability of BSS131
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |